STACK CAPACITOR MANUFACTURING METHOD

摘要

The method of forming stacked capacitor comprises the steps of : forming a charge storage electrode contact hole on a source region(5) after forming a third insulating film(10) on a second flattened insulating film(9); depositing a forth insulating film(12) on a first polysilicone film(11) after depositing the first polysilicone film(11); partial etching of the first polysilicone film(11); forming a fifth insulating film spacer(14) by blanket etch after removing the forth insulating film(14) and depositing a fifth insulating film; forming a charge storage electrode by wet etching of the third insulating film(10) and the fifth insulating layer spacer(14) after blanket etch of the first polysilicone film(11); and forming a plate electrode by depositing a second polysilicone(11') after forming a dielectric film(15) over the whole surface of the wafer.