METHOD OF FLATTENED AL-ALLOY LAYER

摘要

A silicon substrate or an upper layer of a conducting layer(1) has an insulating layer(2) for performing a contact hole and an aluminium alloy wiring connected with the silicon substrate through the contact hole. In order to flat the aluminium alloy wiring, a barrier metal(4) is evaporated on the contact hole. The method includes the steps of: evaporating the first aluminium alloy layer(6) and the second aluminium alloy layer(7) at low temperature; moving an evaporated wafer at low temperature to a chamber maintained at high temperature and high vacuum; forming the third aluminium alloy layer.