| 摘要 |
A process is described for the reception of electrolytic or electroless plating onto a non-platable semiconductor substrate. The process comprises contacting of the semiconductor substrate with a promoter composition containing metal ions, preferably primary type, selected from the group consisting of nickel, cobalt, iron, and copper, and mixtures thereof, and a reducing agent selected from the group consisting of amine boranes, borohydrides, hydrazine, and derivatives thereof, and thereafter immersion of the substrate in conventional electrolytic or electroless plating baths, e.g., nickel or cobalt-hypophosphite type baths or copper-formaldehyde type baths, for the metallic build-up.
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