MANUFACTURE OF SILICON CARBIDE SEMICONDUCTOR ELEMENT

摘要

PURPOSE:To enable manufacture of silicon carbide semiconductor elements suitable for mass production on an industrial scale with considering productivity by using a silicon carbide single crystal film grown on a silicon single crystal substrate. CONSTITUTION:An n type silicon carbide single crystal film 2 and a p type silicon carbide single crystal film 3 are grown on an n type silicon single crystal substrate 1 by CVD method and mesa etching is done to remove the peripheral part. Ni is stuck as an ohmic electrode 4 by plating and Al-Si alloy is vapor- deposited as an ohmic electrode 5. Lead wires are connected to the electrodes 4 and 5 to fabricate a p-n junction diode.