| 摘要 |
PURPOSE:To obtain the title structural material having improved characteristics such as heat conductivity, mechanical strength and the like, which is suitable as the constituent member for a semiconductor manufacturing device by a method wherein an SiC film is formed in a mixed phase using the granular crystal having grain diameter of 10mum or smaller and the pyramid-like crystal having the side length of 1mum or larger. CONSTITUTION:The SiC film, formed on the surface of a substrate using a vapor-phase method, is composed of the granular crystal 1 having the grain diameter of 10mum or less, desirably 5mum or smaller, and the pyramide-like crystal 2 having the side length of 1mum or larger, desirably 5mum or less. Pertaining to the ratio between the SiC granular crystal 1 and the pyramid-like crystal 2 with which the SiC film is composed, it is desirable that the ratio of area occupied by the pyramid-like crystal 2 is set at 20-80%. As the SiC film is composed of the pyramid-like crystal having a very high degree of strength and the microscopic granular crystal 1 with which the space between the pyramid-like crystals is buried, the structure having a very high degree of strength and excellent heat conductivity can be obtained. Besides, the sintered bodies of SiC, Si3N4, graphite, mullite, W, or Mo are enumerated as the substrate used to form the SiC film.
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