| 摘要 |
PURPOSE: To improve photosensitivity of a resist by using a polyphenylsilane compound and a sulfosuccinimide compound as the components of the resist. CONSTITUTION: In this method, the sulfosuccinimide compound used contains alkyl, haloalkyl and phenylsulfosuccinimido groups and, as this compound, a sulfosuccinimide compound having a chemical formula represented by the formula I is appropriately used. In the formula I: R1 is an alkyl, an alkynyl, a haloalkyl or phenyl group; each of R2 and R3 is independently a hydride, an alkyl, an alkynyl or phenyl group, or both of R2 and R3 are cycloalkyl, alkynyl or phenyl groups. The resist image forming material is easily prepared by mixing a polyphenylsilane compound with this sulfosuccinimide compound and normally contains 88 to 97mol% of the polyphenylsilane compound and 3 to 12mol% of the sulfosuccinimide compound. Thus, a positive gradation resist layer can be formed from this material. |
