发明名称 SILICON NITRIDE SINTERED MATERIAL AND ITS PRODUCTION
摘要 PURPOSE: To produce a silicon nitride sintered material having superior high- temperature strength and fracture toughness when compared with a conventional product by depositing crystals in a grain boundary phase. CONSTITUTION: This is a silicon nitride sintered material composed of <=20wt.% of a grain boundary phase of and a particulate phase of Si3 N4 and/or sialon in the remaining main phase. The ratio of quantity of &beta;-Si3 N4 and/or &beta;'-sialon based on the main phase is 0.5-1.0. The grain boundary phase contains Re2 A7 O17 (Re is an element of the group 3A and A is an element of the group 4A) as a crystal component. The objective sintered material is produced by adding thereto AO2 , Re2 O3 , etc., sintering the mixture and subsequently treating this mixture at 1050-1600 deg.C for nucleation and crystal growth.
申请公布号 JPH08319165(A) 申请公布日期 1996.12.03
申请号 JP19950121363 申请日期 1995.05.19
申请人 SUMITOMO ELECTRIC IND LTD 发明人 UKEKAWA JIHEI;HIGUCHI MATSUO
分类号 C04B35/584;C04B35/599 主分类号 C04B35/584
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