| 发明名称 |
METHOD FOR ENHANCING RESISTANCE TO METALLIC DETERIORATION DUE TO FLUORINE AND INTEGRATED CIRCUIT DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To impact deterioration resistance to a metal touching an insulating substance containing fluorine by providing a barrier layer containing fluorine between the insulating material containing fluorine and the metal thereby limiting diffusion of fluorine from the insulating material to the metal. SOLUTION: A metallization has a tungsten via 20 for interconnecting aluminum metallizations 23, 34 through a fluorinated insulation layer 22 of SiZF2- Z (0<Z<2). An upper barrier layer 28 containing no fluorine protects the metallization 23 against corrosion due to fluorine in the insulation layer 22 containing fluorine when the metallization 23 is being patterned. The upper barrier layer 28 containing no fluorine prevents fluorine in the insulation layer 22 from intruding into the joint of the metallization 23 and a metal plug. According to the arrangement, joint of the metallization 23 to a metal plug in the via 20 can be enhanced while preventing the resistance thereof from increasing.
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| 申请公布号 |
JPH10144793(A) |
申请公布日期 |
1998.05.29 |
| 申请号 |
JP19970293792 |
申请日期 |
1997.10.27 |
| 申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
EDWARD C CONEY III;HYUN KEE LEE;THOMAS L MCDIVITT;ANTHONY K STAMPER |
| 分类号 |
H01L21/285;H01L21/314;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/285 |
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