| 摘要 |
PROBLEM TO BE SOLVED: To obtain a resistive element, having high resistivity and low capacitance with respect to the substrate as compared with a conventional metal thin film resistor, which can be formed easily on a compound semiconductor device. SOLUTION: An n-type polycrystalline InGaAs thin film 1 which can be deposited at a temperature of 40 deg.C or below while having resistivity higher than that of a metal thin film resistor 3 is employed as a high resistance element. In this regard, the n-type polycrystalline InGaAs has InAs molar ratio of 0.4-0.8, donor impurity concentration of 5×10<19> -2×10<20> cm<-3> and grain size of 20-40nm. Consequently, a resistive element having sheet resistivity on the order of 1kΩ/(square) at a temperature of 40 deg.C or below and causing no deterioration of characteristics of a compound semiconductor device can be produced. Since the occupation area of the resistive element can be reduced, along with the capacitance with respect to the substrate, as compared with a conventional one, a semiconductor device excellent in high frequency characteristics can be produced at low cost.
|
