Method of programming and erasing an EEPROM device under an elevated temperature and apparatus thereof

摘要

A semiconductor device having an EEPROM array includes resistive elements capable of elevating the temperature of the EEPROM array during programming and erasing operations. The resistive elements are located in close proximity to individual EEPROM cells within an EEPROM array. By elevating the temperature of the EEPROM cell during programming and erasing operations, data errors associated with shifting threshold voltages of floating-gate devices within the EEPROM is reduced. An operating method for improving the long term reliability of an EEPROM device includes the step of providing thermal energy during programming and erasing sufficient to raise the temperature of the EEPROM device to at least about 70 DEG C.