发明名称 APPARATUS AND METHOD FOR FORMING DEPOSITED FILM
摘要 <p>PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a deposited film in which a photovoltaic element having no any characteristic irregularities can be obtained by depositing a semiconductor layer free from any un uniformity in film thickness and film quality. SOLUTION: In the deposited film forming method for continuously forming the deposited film on a substrate 104 by generating plasma in a plurality of continuous vacuum containers while continuously shifting the strip-like substrate 104 in the longitudinal direction thereof, the shape of an aperture in a discharging container is adjusted by an aperture adjusting plate 102 whose shape is set so that irregularities in the thickness of the deposited film in the width direction of the substrate are reduced based on the measurement of the distribution of the deposition speed.</p>
申请公布号 JP2001323380(A) 申请公布日期 2001.11.22
申请号 JP20010067355 申请日期 2001.03.09
申请人 CANON INC 发明人 OZAKI HIROYUKI;MORIYAMA KOUICHIROU;SHIMODA HIROTSUGU;OKADA NAOTO;KANAI MASAHIRO
分类号 C23C16/52;H01L31/04;(IPC1-7):C23C16/52 主分类号 C23C16/52
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