| 摘要 |
A ballasting resistor incorporating therein an H-shaped gate structure reduces a current therethrough by utilizing a pinching effect. The ballasting resistor is formed on a silicon-on-insulator substrate and includes a pair of N+ regions, a P- body region formed between the NM regions, and a pair of P+ nodes connected to the P- body region. The P- body region resides under the gate structure, which includes a thin dielectric layer formed on the P- body region and a conductive layer formed on the dielectric layer. The ballasting resistor is biased in such a manner that the P-N junctions are reverse-biased to pinch down the cross-sectional area of the current path provided inside the P- body region between the nodes as an applied voltage increases. The ballasting resistor has a MOS transistor-like structure; and, therefore, electrostatic discharge protection can be provided for the conventional SOI MOS circuits without requiring additional processing steps.
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