| 摘要 |
A substrate is coated with a chemically amplified negative resist, thereby forming a resist film on the substrate. The chemically amplified negative resist includes: a polymer containing an acrylic acid as a polymerization unit; an acid generator for generating an acid when irradiated with extreme ultraviolet radiation; and a cross-linking agent for cross-linking the polymer in the presence of an acid. Next, the resist film is exposed to extreme ultraviolet radiation to generate an acid in exposed portions of the resist film. Thereafter, the resist film is heated to generate cross-linkage in the exposed portions of the resist film. Subsequently, a silylation reagent is supplied onto the surface of the resist film to form a silylated layer on the surface of non-exposed portions of the resist film. And then the resist film is dry-etched using the silylated layer as a mask, thereby forming a resist pattern out of the non-exposed portions of the resist film.
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