| 发明名称 |
ION IMPLANTATION WITH IMPROVED ION SOURCE LIFE EXPECTANCY |
| 摘要 |
A method of increasing ion source lifetime in an ion implantation system uses the introduction of an inert gas, such as argon or xenon, into the halide-containing source gas. Inert gas constituents have a cleansing effect in the plasma ambient by enhancing sputtering.
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| 申请公布号 |
US2002000523(A1) |
申请公布日期 |
2002.01.03 |
| 申请号 |
US19990252845 |
申请日期 |
1999.02.19 |
| 申请人 |
NG CHE-HOO;ISHIDA EMI;REYES JAIME M.;LIU JINNING;MEHTA SANDEEP |
发明人 |
NG CHE-HOO;ISHIDA EMI;REYES JAIME M.;LIU JINNING;MEHTA SANDEEP |
| 分类号 |
H01J27/08;H01J37/08;(IPC1-7):G21K5/10 |
主分类号 |
H01J27/08 |
| 代理机构 |
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