发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING 2 BANK SHARED INPUT/OUTPUT STRUCTURE
摘要 PURPOSE: A semiconductor memory device having 2 bank shared input/output structure is provided, which has an increased sensing speed at a high frequency by reducing a loading of an input/output line, and makes it easy to design a sense amplifier by reducing a length of the input/output line. CONSTITUTION: The semiconductor memory device comprises the first and the second memory bank where a plurality of memory cells are arranged, and the first multiplexer connecting a common input/output line and the first input/output line inputting/outputting data to/from the selected memory cells of the first memory bank. And the second multiplexer connects the common input/output line with the second input/output line inputting/outputting data to/from the selected memory cells of the second memory bank. And an input/output sense amplifier(107) senses and amplifies data being inputted/output through the common input/output line. The first and the second memory bank are activated selectively.
申请公布号 KR20020007606(A) 申请公布日期 2002.01.29
申请号 KR20000040988 申请日期 2000.07.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, SANG UNG
分类号 G11C7/00;(IPC1-7):G11C7/00 主分类号 G11C7/00
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