发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING 2 BANK SHARED INPUT/OUTPUT STRUCTURE |
摘要 |
PURPOSE: A semiconductor memory device having 2 bank shared input/output structure is provided, which has an increased sensing speed at a high frequency by reducing a loading of an input/output line, and makes it easy to design a sense amplifier by reducing a length of the input/output line. CONSTITUTION: The semiconductor memory device comprises the first and the second memory bank where a plurality of memory cells are arranged, and the first multiplexer connecting a common input/output line and the first input/output line inputting/outputting data to/from the selected memory cells of the first memory bank. And the second multiplexer connects the common input/output line with the second input/output line inputting/outputting data to/from the selected memory cells of the second memory bank. And an input/output sense amplifier(107) senses and amplifies data being inputted/output through the common input/output line. The first and the second memory bank are activated selectively.
|
申请公布号 |
KR20020007606(A) |
申请公布日期 |
2002.01.29 |
申请号 |
KR20000040988 |
申请日期 |
2000.07.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN, SANG UNG |
分类号 |
G11C7/00;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|