| 摘要 |
A method for depositing a first metal layer such as tantalum or copper on a patterned semiconductor wafer using a metal sputtering tool that typically includes an electrically biased wafer chuck is disclosed. Initially, a first test wafer is placed on the wafer chuck and a first test layer of materials is deposited on the first test wafer. During the deposition of the first test layer on the first test wafer, the wafer receives the electrical bias at a first level. A second test wafer is then placed on the wafer chuck and a second test layer of material is deposited with the second wafer receiving a second level of electrical bias. The difference in thickness between the first layer and the second layer is then determined. If the difference in thickness is within a predetermined range, the metal sputtering chamber is qualified to deposit a production layer on a production semiconductor wafer.
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