| 摘要 |
PROBLEM TO BE SOLVED: To obtain both a porcelain composition capable of being baked at 800-1,000 deg.C and having a high relative permittivity and a low dielectric dissipation factor in a high-frequency region at >=30GHz and a porcelain and provide a method for producing the porcelain. SOLUTION: A porcelain composition comprising 90-99.99wt.% ZnTiO3 and 0.01-10wt.% B.0,, is formed into a prescribed shape and then baked at 800-1,000 deg.C in a nonoxidizing atmosphere to afford a dielectric porcelain comprising a crystalline phase 1 consisting essentially of an ilmenite type crystalline phase containing at least Zn and Ti and an amorphous grain boundary phase 2 containing Zn and B. The porcelain has characteristics of 15-30 permittivity (εr) in a millimeter wave region (30-60GHz) and <=15×10<-4> dielectric dissipation factor. |
