| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for applying a nitride film spacer SAC structure to a polycide structure, making a memory cell of a DRAM fine and obtaining high integration. SOLUTION: A semiconductor device is formed with a plurality of first conductive layers formed on a substrate in parallel, a first insulating film formed to cover the first conductive layers, a second insulating film with which a part between the adjacent first conductive layers is filled, which is matched with the upper face of the first insulating film and has a face parallel to the substrate, and a contact window which is formed in the second insulating film and in which a part of a base is formed to cover the first insulating film. COPYRIGHT: (C)2005,JPO&NCIPI
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