| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of an LSI by reducing capacity between wiring. SOLUTION: Wiring W1 which is connected to source-drain regions 24a and 24b of an MOS transistor is formed on an insulating layer 25. The wiring W1 consists of metals 28a and 28b, such as copper, and barrier layers 27a and 27b covering the surface of the metals 28a and 28b. Insulating layers 29, 30, and 32 are formed on wiring W1. A cavity 31 is formed between the wiring W1. A mixed gas of oxygen and carbon dioxide, or air is filled in the cavity 31. Wiring W2 is formed on the insulating layer 32. Similarly, a cavity 38 is formed between the wiring W2, as well as between wiring W1. The mixed gas of oxygen and carbon dioxide, or air is filled in the cavity 38. COPYRIGHT: (C)2005,JPO&NCIPI
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