HORIZONTAL SHORT CHANNEL DMOS AND ITS MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a horizontal short channel DMOS which is excellent in high speed switching characteristics and current driving characteristics for reducing a gate resistance and an on-resistance. SOLUTION: In this horizontal short channel DMOS1A, an n-type well 134 for on-resistance reduction is formed so as not to be brought into contact with a p-type well 114 in the neighborhood of the surface of an n--type epitaxial layer 110; and an n-type buried layer 108 containing n-type impurity whose concentration is higher than that of the n--type epitaxial layer 110 is formed in a boundary between a p--type semiconductor substrate 106 and the n--type epitaxial layer 110, so as not to be brought into contact with an n-type well 134 for on-resistance reduction at least in a part overlapped with a p-type well 114 when it is flatly viewed. COPYRIGHT: (C)2005,JPO&NCIPI