| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can suppress the generation of its kink and emit its laser beam having a desired horizontally radiating angle, by specifying the width of its ridge, i.e., the width of its stripe and the thickness of its current blocking layer. SOLUTION: In the compound semiconductor multilayer structure 8 of the semiconductor laser element, the width of its stripe 13 is determined based on the correlation of its laser beam to its horizontally radiating angle. Also, the minimum thickness d of its current blocking layer is determined based on the relation between the minimum thickness d and the IL characteristic of its laser beam. COPYRIGHT: (C)2005,JPO&NCIPI
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