发明名称 WAFER HOLDING JIG AND VAPOR PHASE GROWING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a wafer holding jig and a vapor phase growing apparatus that can reduce flaws generated on the rear surface of a silicon epitaxial wafer after vapor phase growth. SOLUTION: The wafer holding jig 30 is used to take out a silicon epitaxial wafer W from a reaction chamber 11 while holding the main rear surface thereof, and a counterbore 32 is formed with a supporting face 322 that is inclined to a level surface so that it may become lower toward the center of the counterbore 32 from its outer periphery, and the supporting face 322 supports the outer peripheral edge of the rear surface of the silicon epitaxial wafer W. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005235906(A) 申请公布日期 2005.09.02
申请号 JP20040041188 申请日期 2004.02.18
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 NAKASUGI SUNAO;ARAI TAKESHI
分类号 B65G49/07;H01L21/677;H01L21/68;(IPC1-7):H01L21/68 主分类号 B65G49/07
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