| 发明名称 |
ANALLOG PHASE CHANGE MEMORY |
| 摘要 |
An analog memory may be formed using a phase change material. The phase change material may assume one of a number of resistance states which defines a specific analog characteristic to be stored.
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| 申请公布号 |
KR20060030523(A) |
申请公布日期 |
2006.04.10 |
| 申请号 |
KR20067002395 |
申请日期 |
2006.02.03 |
| 申请人 |
OVONYX, INC. |
发明人 |
PARKINSON WARD D.;BENN ALLEN |
| 分类号 |
G11C13/02;G11C16/02;G11C27/00 |
主分类号 |
G11C13/02 |
| 代理机构 |
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