MEMORY CELL SYSTEM WITH MULTIPLE NITRIDE LAYERS

摘要

A memory cell system (1200) is provided including forming a first insulator layer (512) over a semiconductor substrate (504), forming a charge trap layer (514) over the first insulator layer (512), forming a second insulator layer (520) over the charge trap layer (514), forming a top blocking intermediate layer (516) over the second insulator layer (520), and forming a contact layer (506) over the top blocking intermediate layer (516).