| 摘要 |
A thin film semiconductor 400, 410, 412 and a method 100, 300 of its fabrication use induced 120, 330 crystallization and aggregation of a nanocrystal seed layer 230 to form a merged-domain layer 250, 404. The nanocrystal seed layer 230 is deposited 1 10 onto a substrate 210, 402 surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metaloxide transistor 410 and a method 300 of its production employ the thin film semiconductor 400 as a channel 412 of the transistor 410. The merged-domain layer 250, 404 exhibits high carrier mobility. |
