Method for measuring hysteresis curve and anisotropic energy of magnetic memory unit

摘要

A method for measuring hysteresis curves and anisotropic energy of magnetic memory units is disclosed. It comprises gradually applying different magnetic fields to a single-layer or a multilayer magnetic structure (such as a MRAM memory unit) by extra ordinary Hall effect, and recording the variation of the Hall voltage to obtain the hysteresis curve and anisotropic energy with specific instruments, and calculating the individual anisotropic energy value of the magnetic material of the single-layer or the multilayer magnetic structure.