SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A semiconductor device manufacturing method includes a step of bonding a surface protection sheet (7) on a circuit front side of a wafer (1) wherein an adhesive film (3) is bonded and a groove (6) which partitions the surface by each circuit is formed on the circuit front surface of the wafer; a step of reducing the thickness of the wafer (1) by polishing the rear surface of the wafer and finally dividing the wafer into chips (10); a step of picking up each chip (10) with the adhesive film (3); a step of die-bonding each chip at a prescribed position on a chip mounting substrate (11) through the adhesive film; and a step of firmly bonding the chip on the chip mounting substrate by heating the die-bonded chip whereupon the adhesive film is bonded. In the method, a step of pressurizing the laminated body including the bonded film with a static pressure of 0.05MPa or more to the normal pressure is performed one or more times, at any stage before firmly bonding the chip on the chip mounting substrate after bonding the adhesive film on the wafer.