发明名称 |
RAISED STI STRUCTURE AND SUPERDAMASCENE TECHNIQUE FOR NMOSFET PERFORMANCE ENHANCEMENT WITH EMBEDDED SILICON CARBON |
摘要 |
<p>An embedded silicon carbon (Si:C) having a substitutional carbon content in excess of one percent in order to effectively increase electron mobility by application of tension to a channel region of an NFET is achieved by overfilling a gap or trench formed by transistor gate structures with Si:C and polishing an etching the Si:C to or below a surface of a raised gate structure in a super-Damascene process, leaving Si:C only in selected regions above the transistor source and drain, even though processes capable of depositing Si:C with sufficiently high substitutional carbon content are inherently non-selective.</p> |
申请公布号 |
KR20090046786(A) |
申请公布日期 |
2009.05.11 |
申请号 |
KR20097001195 |
申请日期 |
2007.07.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAKRAVARTI ASHIMA B.;CHIDAMBARRAO DURESETI;HOLT JUDSON R.;LIU YAOCHENG;RIM, KERN |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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