发明名称 Method for fabricating light-emitting element using chamber with mass spectrometer
摘要 A light-emitting element and its fabrication method are provided. The light-emitting element includes an EL layer between a pair of electrode, and the EL layer is formed by evaporation of an organic compound. The evaporation is conducted so that the partial pressure of a component with a specific molecular weight in a film-formation chamber, which is monitored by a mass spectrometer, does not exceed a specific value during the evaporation. This method allows the formation of a light-emitting element having an improved lifetime.
申请公布号 US9365921(B2) 申请公布日期 2016.06.14
申请号 US201414314566 申请日期 2014.06.25
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Seo Satoshi;Suzuki Tsunenori
分类号 C23C14/12;C23C14/24;C23C14/54;H01L51/00;H01L51/56 主分类号 C23C14/12
代理机构 Husch Blackwell LLP 代理人 Husch Blackwell LLP
主权项 1. A method for fabricating a semiconductor device, the method comprising: forming a film by evaporating an organic compound in a film-formation chamber, wherein a partial pressure of a component in the film-formation chamber is monitored during the evaporation by using a mass spectrometer, and wherein the component exhibits a m/z in a range from 46 to 200.
地址 JP