发明名称 |
Method for fabricating light-emitting element using chamber with mass spectrometer |
摘要 |
A light-emitting element and its fabrication method are provided. The light-emitting element includes an EL layer between a pair of electrode, and the EL layer is formed by evaporation of an organic compound. The evaporation is conducted so that the partial pressure of a component with a specific molecular weight in a film-formation chamber, which is monitored by a mass spectrometer, does not exceed a specific value during the evaporation. This method allows the formation of a light-emitting element having an improved lifetime. |
申请公布号 |
US9365921(B2) |
申请公布日期 |
2016.06.14 |
申请号 |
US201414314566 |
申请日期 |
2014.06.25 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei;Seo Satoshi;Suzuki Tsunenori |
分类号 |
C23C14/12;C23C14/24;C23C14/54;H01L51/00;H01L51/56 |
主分类号 |
C23C14/12 |
代理机构 |
Husch Blackwell LLP |
代理人 |
Husch Blackwell LLP |
主权项 |
1. A method for fabricating a semiconductor device, the method comprising:
forming a film by evaporating an organic compound in a film-formation chamber, wherein a partial pressure of a component in the film-formation chamber is monitored during the evaporation by using a mass spectrometer, and wherein the component exhibits a m/z in a range from 46 to 200. |
地址 |
JP |