THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE PANEL

摘要

A thin film transistor array panel includes: a gate line disposed on a substrate and including a first connection member of a gate driver region and a gate electrode of a display area, a gate insulating layer disposed on the substrate and having a first contact hole exposing the first connection member, a semiconductor layer disposed on a region of the gate insulating layer, a data line disposed on the gate insulating layer and the semiconductor layer and including a drain electrode, a source electrode, and a second connection member connected to the first connection member through the first contact hole, a passivation layer disposed on the data line, the source electrode, the drain electrode, and the second connection member, and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode. A horizontal width of the first contact hole ranges from 1 to 2 μm.

主权项

1. A thin film transistor array panel comprising:
a substrate; a gate line disposed on the substrate and including a first connection member of a gate driver region and a gate electrode of a display area; a gate insulating layer disposed on the substrate and having a first contact hole exposing the first connection member; a semiconductor layer disposed on a region of the gate insulating layer; a data line disposed on the gate insulating layer and the semiconductor layer and including a drain electrode, a source electrode, and a second connection member connected to the first connection member through the first contact hole; a passivation layer disposed on the data line, the source electrode, the drain electrode, and the second connection member; and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode, wherein a horizontal width of the first contact hole is in a range of 1 to 2 μm.