MULTI-ORIENTATION SOI SUBSTRATES FOR CO-INTEGRATION OF DIFFERENT CONDUCTIVITY TYPE SEMICONDUCTOR DEVICES

摘要

A method of forming a semiconductor device that includes providing a base semiconductor substrate having a first orientation crystal plane, and forming an epitaxial oxide layer on the base semiconductor substrate. The epitaxial oxide layer has the first orientation crystal plane. A first semiconductor layer having a second orientation crystal plane is then bonded to the epitaxial oxide layer. A portion of the first semiconductor layer is removed to expose a second surface of the epitaxial oxide layer. A remaining portion of the first semiconductor layer is present on the first surface of the epitaxial oxide layer; and epitaxially forming a second semiconductor layer on the second surface of the epitaxial oxide layer, wherein the second semiconductor layer has a first orientation crystal plane.

主权项

1. A semiconductor device comprising:
a base substrate comprised of a semiconductor material having a first orientation crystal plane; an epitaxial oxide layer present directly on the base substrate and having the first orientation crystal plane; and at least one semiconductor on insulator layer (SOI) present on the epitaxial oxide layer, wherein a first semiconductor layer of the at least one SOI layer has a second orientation crystal plane that is different from the first orientation crystal plane and is present directly on a first portion of the epitaxial oxide layer having the first orientation crystal plane, the first semiconductor layer providing at least the channel region of first conductivity semiconductor device, and a second semiconductor layer of the at least one SOI layer present directly on a second portion of the epitaxial oxide layer that has the first orientation crystal plane, the second semiconductor layer provides at least the channel region of second conductivity semiconductor device.