DEEP TRENCH POLYSILICON FIN FIRST

摘要

After forming a recessed conductive material portion over a deep trench capacitor located in a lower portion of a deep trench embedded in a substrate, a hard mask layer is formed over a top semiconductor layer of the substrate and the recessed conductive material portion such that the hard mask layer completely fills the deep trench. Next, the hard mask layer, the top semiconductor layer and the recessed conductive material portion are patterned to form a laterally contacting pair of a semiconductor fin and a conductive strap structure over the deep trench capacitor as well as a dielectric cap embedded in the deep trench. The dielectric cap vertically contacts a lower portion of the conductive strap structure and laterally surrounds a portion of an upper portion of the conductive strap structure that is not in contact with the semiconductor fin.

主权项

1. A semiconductor structure comprising:
a semiconductor fin located on a substrate; a deep trench capacitor embedded in said substrate; a conductive strap structure overlying said deep trench capacitor, wherein said conductive strap structure comprises a lower portion vertically contacting topmost surfaces of said deep trench capacitor and an upper portion adjoined a portion of said lower portion, said upper portion having a first portion laterally contacting said semiconductor fin and a second portion underlying said first portion contacting a portion of said lower portion; and a dielectric cap embedded in said substrate, said dielectric cap vertically contacting another portion of said lower portion of said conductive strap structure and laterally surrounding said second portion of said upper portion of said conductive strap structure.