SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

The present invention makes it possible to improve the reliability of a semiconductor device. The semiconductor device has, over a semiconductor substrate, a pad electrode formed at the uppermost layer of a plurality of wiring layers, a surface protective film having an opening over the pad electrode, a redistribution line being formed over the surface protective film and having an upper surface and a side surface, a sidewall barrier film comprising an insulating film covering the side surface and exposing the upper surface of the redistribution line, and a cap metallic film covering the upper surface of the redistribution line. Then the upper surface and side surface of the redistribution line are covered with the cap metallic film or the sidewall barrier film and the cap metallic film and the sidewall barrier film have an overlapping section.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a plurality of wiring layers formed over the semiconductor substrate; a pad electrode formed at the uppermost layer of the wiring layers; a protective film having an opening over the pad electrode; a base metallic film formed over the protective film and the pad electrode; a redistribution line being formed over the base metallic film and having an upper surface and a side surface; a sidewall barrier film comprised of an insulating film covering the side surface of the redistribution line; and a cap metallic film covering the upper surface of the redistribution line, wherein the upper surface and the side surface of the redistribution line are covered with the cap metallic film or the sidewall barrier film and the cap metallic film and the sidewall barrier film have an overlapping section.