发明名称 SEMICONDUCTOR DEVICES AND METHOD FOR FORMING THE SAME
摘要 A manufacturing method of a semiconductor device comprises the following steps of: forming mask patterns on a substrate; forming a sub-film, which covers the mask patterns, on the substrate; anisotropically etching the sub-film to form sub-patterns on sidewalls of the mask patterns; and etching the mask patterns and the sub-patterns of the substrate by an etching mask to form a trench, which defines active patterns. Therefore, the method can easily manufacture a semiconductor device having excellent reliability.
申请公布号 KR20160087968(A) 申请公布日期 2016.07.25
申请号 KR20150006915 申请日期 2015.01.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOON, CHAN SIC;PARK, JI UNG;LEE, KI SEOK;PARK, CHAN HO;JUNG, HYEON OK
分类号 H01L21/033;H01L21/027 主分类号 H01L21/033
代理机构 代理人
主权项
地址