发明名称 |
SEMICONDUCTOR DEVICES AND METHOD FOR FORMING THE SAME |
摘要 |
A manufacturing method of a semiconductor device comprises the following steps of: forming mask patterns on a substrate; forming a sub-film, which covers the mask patterns, on the substrate; anisotropically etching the sub-film to form sub-patterns on sidewalls of the mask patterns; and etching the mask patterns and the sub-patterns of the substrate by an etching mask to form a trench, which defines active patterns. Therefore, the method can easily manufacture a semiconductor device having excellent reliability. |
申请公布号 |
KR20160087968(A) |
申请公布日期 |
2016.07.25 |
申请号 |
KR20150006915 |
申请日期 |
2015.01.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON, CHAN SIC;PARK, JI UNG;LEE, KI SEOK;PARK, CHAN HO;JUNG, HYEON OK |
分类号 |
H01L21/033;H01L21/027 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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