Mold and process for production of mold

摘要

A mold manufacturing method of an embodiment of the present invention includes the steps of: (a) providing a mold base; (b) partially anodizing the aluminum layer to form a porous alumina layer, the porous alumina layer having a porous layer which defines a plurality of minute recessed portions and a barrier layer which is provided at a bottom of each of the plurality of minute recessed portions; and (c) after step (b), performing etching, thereby enlarging the plurality of minute recessed portions of the porous alumina layer, wherein in step (c) the etching is performed such that an average depth of the plurality of minute recessed portions increases but does not exceed a 1/7 of an average thickness of the barrier layer before the etching.

主权项

1. A method for manufacturing a mold which has an inverted moth-eye structure over its surface, the inverted moth-eye structure having a plurality of recessed portions whose two-dimensional size viewed in a direction normal to its surface is not less than 10 nm and less than 500 nm, the method comprising the steps of:
(a) providing a mold base, the mold base including a base, an inorganic underlayer, made of an inorganic oxide or an inorganic nitride, provided on the base, a buffer layer, containing aluminum and either of oxygen or nitrogen, provided on the inorganic underlayer, and an aluminum layer provided on the buffer layer; (b) partially anodizing the aluminum layer to form a porous alumina layer, the porous alumina layer having a porous layer which defines a plurality of minute recessed portions and a barrier layer which is provided at a bottom of each of the plurality of minute recessed portions; and (c) after step (b), bringing the porous alumina layer into contact with an etching solution to perform etching, thereby enlarging the plurality of minute recessed portions of the porous alumina layer, wherein in step (c) the etching is performed such that an average depth of the plurality of minute recessed portions increases but does not exceed a 1/7 of an average thickness of the barrier layer before the etching.