| 发明名称 | Method of fabricating silicon carbide powder | ||
| 摘要 | A method of fabricating silicon carbide powder according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon, a silicon carbide source and a carbone source comprising at least one of a solid carbon and a organic compound; and reacting the mixture. | ||
| 申请公布号 | US9416012(B2) | 申请公布日期 | 2016.08.16 |
| 申请号 | US201214129219 | 申请日期 | 2012.06.25 |
| 申请人 | LG INNOTEK CO., LTD. | 发明人 | Kim Byung Sook;Han Jung Eun |
| 分类号 | C01B31/00;C01B31/36;C04B35/573;B82Y30/00 | 主分类号 | C01B31/00 |
| 代理机构 | Saliwanchik, Lloyd & Eisenschenk | 代理人 | Saliwanchik, Lloyd & Eisenschenk |
| 主权项 | 1. A method of fabricating silicon carbide powder, the method comprising: preparing a mixture by mixing a silicon source comprising silicon, a silicon carbide source and a carbon source comprising at least one of a solid carbon and an organic compound; and reacting the mixture, wherein a weight ratio of the silicon carbide source to a sum of the silicon source and the carbon source is in a range of about 1:1 to about 1:3. | ||
| 地址 | Seoul KR | ||