Compositions comprising base-reactive component and processes for photolithography

摘要

New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.

主权项

1. A method for processing a photoresist composition, comprising:
(a) applying on a substrate a photoresist composition comprising:
(i) one or more resins,(ii) a photoactive component, and(iii) one or more materials that comprise base-reactive groups, the one or more materials distinct from the one or more resins; and (b) dry exposing the applied photoresist layer to radiation activating for the photoresist composition; wherein said (iii) one or more materials comprise a resin that comprises a repeat unit provided by at least one monomer represent by the following Formula (I), (II) or (III): where in Formula (I) M is a polymerizable functional group, R is an alkyl spacer group with or without carboxyl linkages, Rf is a fluoro or perfluoro alkyl group with at least the alpha carbon being fluorinated; wherein in Formula (II) M is a polymerizable functional group, R is C1-20 linear or branched alkyl spacer group with or without carboxyl linkages, Rf is a fluoro or perfluoro alkyl group with at least the alpha carbon being fluorinated, and n is an integer equal to or greater than 2; wherein in Formula (III) M is a polymerizable functional group R1 is an alkyl spacer with or without carboxyl linkages, Rf is a fluoro or perfluoro alkylene group with at least the alpha carbon being fluorinated, and R2 is an alkyl group.