| 发明名称 | Method and apparatus for correcting errors on a wafer processed by a photolithographic mask | ||
| 摘要 | The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask. | ||
| 申请公布号 | US9436080(B2) | 申请公布日期 | 2016.09.06 |
| 申请号 | US201113994556 | 申请日期 | 2011.12.02 |
| 申请人 | Carl Zeiss SMS GmbH;Carl Zeiss SMS Ltd. | 发明人 | Beyer Dirk;Dmitriev Vladimir;Sharoni Ofir;Wertsman Nadav |
| 分类号 | G03B27/68;G03B27/62;G03F1/72;G03F1/84;G03F7/20 | 主分类号 | G03B27/68 |
| 代理机构 | Fish & Richardson P.C. | 代理人 | Fish & Richardson P.C. |
| 主权项 | 1. A method for correcting at least one overlay error on wafers processed by at least one photolithographic mask, the method comprising: a. measuring the at least one overlay error on a wafer at a wafer processing site; b. modifying a global overlay error of the at least one overlay error of the at least one photolithographic mask by a linear transformation; and c. modifying a local overlay error of the at least one overlay error of the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask. | ||
| 地址 | Jena DE | ||