| 发明名称 |
Verfahren zur Getterung von n-Halbleiter-Kristallscheiben |
| 摘要 |
Cu impurity is removed from a Ge slice by applying an In layer thereto, heating the slice to 650-750 DEG C. for at least ten minutes and removing the In by means of a substance e.g. HCl, which does not attack the Ge but which dissolves the In. |
| 申请公布号 |
DE1544186(A1) |
申请公布日期 |
1970.07.23 |
| 申请号 |
DE19661544186 |
申请日期 |
1966.03.10 |
| 申请人 |
EGYESUELT IZZOLAMPA ES VILLAMOSSAGI RESZVENYTARSASAG |
发明人 |
MARTA ANDRASI GEB. FOELDES,DIPL.-CHEM.ING.;MARKOVITS,JANOS |
| 分类号 |
C22F1/16;C30B1/02;C30B33/00;H01L21/00;H01L21/24 |
主分类号 |
C22F1/16 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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