| 摘要 |
1,154,892. Transistor switching circuits. TEXAS INSTRUMENTS Inc. 6 July, 1966, No. 56041/68. Divided out of 1,154,891. Heading H3T. [Also in Division H1] Charge storage in the base region of a switching transistor is reduced by connecting a Schottky diode (metal-semi-conductor surface barrier) in parallel with, and poled in the same sense as, the collector-base junction. The diode conducts at lower voltage in the -forward direction than does the transistor collector-base junction. The diode and transistor may be formed as an integrated circuit (see Division H1). |
