| 摘要 |
PURPOSE:To prevent gate dielectric breakdown due to overvoltage, by mounting a protective device. CONSTITUTION:A diffusion region 2 functioning as a source or a drain is installed to a semicondctor substrate 1, and a conductive region 4 is mounted through an insulating film 3. The conductive region 4 consists of a gate portion, which thins the insulating film 3 between the region 4 and the substrate 1, and a wiring region portion. The gate portion of the conductive region 4 is arranged in such a manner that its one portion covers an upper portion of a boundary between the diffusion region and the substrate 1 while holding the region insulating film 3, and the circumference of the gate portion of the conductive region 4 is covered by means of a conductive region 5 while putting the region insulating film 3. A strong electric field is formed among the diffusion region 2 and the conductive regions, and the generation of dielectric breakdown among the regions is moderated by mounting the conductive region 5. |
