| 摘要 |
PURPOSE:To assure contact wiring without disconnection and junction breakdown by means of using a laminated wiring composed of an Al-Si film (subject to Si with high concentration) and an Al-Ti film (or Al-Si-Ti). CONSTITUTION:An SiO2 insulating film 12, a contact hole 13 opened in the insulating film 12, an N<+> type region 14 formed by N-type impurity diffusion through the contact hole 13, the first Al-Si film 15 containing 10-15% of Si and the second Al-Ti film 16 containing 0.3% of Ti are respectively formed on a P-type silicon substrate 11. In such a laminated layer wiring, the Si suction by the second Al-Ti film 16 is stopped at the first Al-Si film 15 with high Si concentration not to reach the bulk of substrate 11 without causing any junction breakdown at all. On the other hand, the second Al-Ti film 16 containing Ti with fine grain diameter (less than 1mum) can avoid any disconnection due to the stress of cover film thereon even if the film 16 is formed into a wiring 2mum in width us usual. |
