| 摘要 |
PURPOSE:To obtain fine patterns having good shape of submicron order by using a photosensitive material having improved sensitivity for excimer laser of 248.4nm wavelength obtd. by incorporating a specified Meldrum's acid deriv. as a photosensitive compd. CONSTITUTION:The title photosensitive material contains a Meldrum's acid deriv. expressed by formula I as a photosensitive compd. In formula I, R is an alkyl group, aralkyl group, a hydroxyalkyl group, or an alkoxyalkyl group; X is an H atom. -SO3CH3 group or a functional group capable of reacting with a resin; n is a positive integer. A photosensitive material having high photosensitivity for far ultraviolet rays is obtd. Further, a photosensitive material effective for photolithography is obtd. by combining the compd. with a photosensitive reagent causing great change of light transmittance before and after exposure and a resin (main polymer) having high transmittance for light having a wavelength near 248.4nm, and a pattern is formed by using the photosensitive material. By this constitution, fine patterns are formed by executing exposure to far infrared rays and development. |
