| 摘要 |
<p>A semiconductor laser device including a plurality of oscillation stripes (1, 20, 39) so that phase locked oscillation can be generated at adjacent oscillation stripes is disclosed, in which device dummy regions (2, 21, 27, 40) for transmitting a current uncontributive to laser oscillation are arranged on both sides of an oscillation stripe region containing the oscillation stripes.</p> |
