发明名称 Semiconductor integrated circuit device with noise protecting shield.
摘要 <p>Disclosed is a semiconductor integrated circuit device having semiconductor integrated circuit blocks (1, 2) disposed close to each other. An insulating layer (20) is interposed between each adjacent pair of the semiconductor integrated circuit blocks. An electroconductive shield member (50) is formed between the adjacent semiconductor integrated circuit blocks to limit the capacitive coupling therebetween. The shield member is electrically insulated from the semiconductor integrated circuit blocks and is maintained at a predetermined fixed potential. <IMAGE></p>
申请公布号 EP0567694(A1) 申请公布日期 1993.11.03
申请号 EP19920303790 申请日期 1992.04.27
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KUMAMOTO, TOSHIO;KOUNO, HIROYUKI
分类号 H01L23/552;H01L23/58;H01L25/065;H01L25/18;H01L27/02;H01L27/06;(IPC1-7):H01L23/522 主分类号 H01L23/552
代理机构 代理人
主权项
地址