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发明名称
SEMICONDUCTOR INTEGRATED CIRCUIT SUBSTRATE, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SUBSTRATE, AND THEIR PRODUCTION
摘要
申请公布号
JPH0661235(A)
申请公布日期
1994.03.04
申请号
JP19920102720
申请日期
1992.04.22
申请人
HITACHI LTD
发明人
WATANABE KUNIHIKO;KATO TERUO
分类号
H01L21/02;H01L21/322;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L21/322
主分类号
H01L21/02
代理机构
代理人
主权项
地址
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