| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a sense amplifier circuit which is not affected by an exhausted memory cell. SOLUTION: A sense amplifier circuit for semiconductor storage device is provided with a first current/voltage converting branch 1 which converts the current of a memory cell MC to be read out into a voltage signal V9, a second current/voltage converting branch 2 which converts a reference current into a reference voltage signal V20, and a comparator 3 which compares the signals V9 and V20 with each other. The amplifier circuit is also provided with a capacitor C1 which reduces and couples the voltage signal V9 from the comparator 3 and a P-channel MOSFET 13 which supplies charges which are suitable for compensating for an offset voltage induced to the voltage signal V9 by the offset current superposed upon the current of the memory cell MC to be read out to the capacitor C1.</p> |
