| 摘要 |
PURPOSE: To provide the formation of an element isolation area, which reduces particle foreign material residue, allows uniform LOCOS oxidation by means of a film which has a simple layer structure, facilitates bird's beak length control and reduces the number of processes. CONSTITUTION: After forming a pad layer 22 on a semiconductor substrate, an opening is formed by photolithography. In the subsequent crystal growing process, a single crystal silicon layer 24 is selectively grown in the opening. Then, after forming an oxide mask layer 26 so as to cover the pad layer 22 and the single crystal silicon layer 24, a part of the single crystal silicon layer 24 is exposed from the surface by photolithography. Then, an element isolation area 28 is formed by performing thermal oxidation from the exposed surface side of the single crystal silicon layer 24 to the inside of the semiconductor substrate 20. The process of forming the element isolation area 28 is completed when the oxide mask layer 26 is removed. |
