ALUMINUM NITRIDE-BASE COMPOSITE, ELECTRIC FUNCTIONAL MATERIAL, ELECTROSTATIC CHUCK AND PRODUCTION OF ALUMINUM NITRIDE-BASE COMPOSITE

摘要

PROBLEM TO BE SOLVED: To obtain a new AlN-base material less liable to variation in volume resistivity in a wider temp. range. SOLUTION: This AlN-base composite contains AlN grains and γ-alumina type crystals. The concn. of oxygen in the AlN grains measured with an X-ray microanalyzer is 0.40-0.60 wt.% and the number of spins per unit mg of Al obtd. from a spectrum by an electron spin resonance method is 1×10<12> -1×10<13> spin/mg. The main peak by cathode luminescence is preferably at 350-370 nm and the ratio of the intensity of the diffraction peak (2θ=44 to 45 deg.) of the γ-alumina type crystals to that of the AlN grains is preferably >=0.025.