| 发明名称 |
Method of forming tunnel oxide film in semiconductor device |
| 摘要 |
The present invention relates to a method of forming a tunnel oxide film in a semiconductor device, in which a predetermined thickness of the oxide film is not removed during a process of removing the oxide film in a memory cell area and a low voltage transistor area after a gate oxide film for a high voltage transistor is formed, thereby preventing increase of surface roughness on a substrate and contamination caused by absorbed carbon components which are generated when the oxide film and the photo resist film are removed. Therefore, it is possible to form a tunnel oxide film having an excellent film quality.
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| 申请公布号 |
US6858543(B2) |
申请公布日期 |
2005.02.22 |
| 申请号 |
US20030730688 |
申请日期 |
2003.12.08 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE SEUNG CHEOL;PARK SANG WOOK |
| 分类号 |
H01L21/8234;H01L21/02;H01L21/28;H01L21/302;H01L21/31;H01L21/311;H01L21/316;H01L21/336;H01L21/8247;H01L27/088;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8234 |
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